Service Device/System: Spatial Atomic Layer Deposition (ALD) system for passivation of Alumina (Al2O3)
Thinner than 10 nm; Priced over 1 wafer
Service Device/System: Spatial Atomic Layer Deposition (ALD) system for passivation of Alumina (Al2O3)
Thinner than 10 nm; Priced over 1 wafer
Service Device/System: Spatial Atomic Layer Deposition (ALD) system for passivation of Alumina (Al2O3)
10-30 nm; Priced over 1 wafer
Service Device/System: Spatial Atomic Layer Deposition (ALD) system for passivation of Alumina (Al2O3)
Thicker than 30 nm; Priced over 1 wafer
Service Device/System: PERC cell production
Priced over 10 wafers
Service Device/System: Furnaces
hour
Service Device/System: Ion implantation process
Process for 1 element; Priced over 3 wafers
Service Device/System: Diffusion furnaces for full-area p and n-type doping
Priced over 10 wafers
Service Device/System: Low-pressure doping furnace
Priced over 10 wafers
Service Device/System: Cluster device for heterojunction and thin-film Si cell production
i-amorphous Si coating; unit
Service Device/System: Cluster device for heterojunction and thin-film Si cell production
n-amorphous Si coating; unit
Service Device/System: Cluster device for heterojunction and thin-film Si cell production
p-amorphous Si coating; unit
Service Device/System: Cluster device for heterojunction and thin-film Si cell production
ITO coating; unit
Service Device/System: Cluster device for heterojunction and thin-film Si cell production
Production of a complete heterojunction cell; unit
Service Device/System: Sputter coating system
Excluding metal price; unit
Service Device/System: Spin coater system
hour
Service Device/System: Marking laser
hour
Service Device/System: Thermal evaporation system
Excluding metal price; unit
Service Device/System: Metal evaporation process by e-beam
Excluding metal price; 1 evaporation
Service Device/System: Electron beam evaporation system
Excluding metal price; unit
Service Device/System: Fully automatic wet benches for Si wafer patterning and contact isolation
1-100 units (including wafer); Priced over 50 wafers
Service Device/System: Fully automatic wet benches for Si wafer patterning and contact isolation
100 units and above (including slice); Priced over 50 wafers
Service Device/System: Electroplating
wafer
Service Device/System: Oxidation furnace
Priced over 10 wafers
Service Device/System: Nano-second laser for scratching thin films
hour
Service Device/System: Production of thin film Si by LPCVD
Thinner than 100 nm; Priced over 20 wafers
Service Device/System: Production of thin film Si by LPCVD
100-200 nm; Priced over 20 wafers
Service Device/System: Production of thin film Si by LPCVD
Thicker than 200 nm; Priced over 20 wafers
Service Device/System: Picosecond laser for contact opening and material removal/cutting
hour
Service Device/System: Annealing furnaces
hour
Service Device/System: Wet benches
hour
Service Device/System: E-beam evaporation system for Si or Ge coating
unit
Service Device/System: Wet benches for cleaning and similar chemical process
RCA-1, RCA-2 processes (including wafer); Priced over 25 wafers
Service Device/System: Firing process by a conveyor belt furnace
Silver print; 10 wafers
Service Device/System: Firing process by a conveyor belt furnace
Al print; 10 wafers
Service Device/System: Firing process by a conveyor belt furnace
Silver and Al print together; 10 wafers
Service Device/System: PECVD for dielectric (SixNy and SiOxNy) coating processes
Thinner than 100 nm; Priced over 20 wafers
Service Device/System: PECVD for dielectric (SixNy and SiOxNy) coating processes
100-200 nm; Priced over 20 wafers
Service Device/System: PECVD for dielectric (SixNy and SiOxNy) coating processes
Thicker than 200 nm; Priced over 20 wafers
Service Device/System: Oxygen plasma system
unit
Service Device/System: Reactive Ion Etching (RIE) device
unit