Development of High Efficiency Bifacial Passivated Emitter Rear Totally Ion Implanted Crystalline Silicon Solar Cell

The aim of the project (Bi2PERT) is to design and develop ion implanted doped layers for advanced development of bifacial industrial crystalline silicon (cSi) solar cells (SC) based on Passivated Emitter Rear Totally Diffused (PERT) design. In this project, latest advancements pertaining the fabrication and optimization of semiconducting layers will be employed to boost the existing SC performance. Moreover, thermal budget associated with the standard thermal diffusion process will also be minimized by proposing the ion implantation technique to form doped cSi zones. The main focus of this project will be devoted to design and develop cSi SC with the potential to be integrated in an industrial setup, thus impacting the photovoltaic (PV) market in a positive manner.