Development of High Efficiency Bifacial Passivated Emitter Rear Totally Ion Implanted Crystalline Silicon Solar Cell

Proje Koordinatörü
Prof. Dr. Raşit TURAN
Araştırmacılar
Dr. Hisham NASSER, Dr. Bülent ARIKAN
Fon Sağlayıcı Enstitü/Kuruluş
TÜBİTAK/UİDB
Destek Program Kodu
2521
Destek Program Adı
Pakistan Bilim ve Teknoloji Bakanlığı ile İş Birliği Programı
Proje Başlangıç-Bitiş Tarihleri
2020-2022

The aim of the project (Bi2PERT) is to design and develop ion implanted doped layers for advanced development of bifacial industrial crystalline silicon (cSi) solar cells (SC) based on Passivated Emitter Rear Totally Diffused (PERT) design. In this project, latest advancements pertaining the fabrication and optimization of semiconducting layers will be employed to boost the existing SC performance. Moreover, thermal budget associated with the standard thermal diffusion process will also be minimized by proposing the ion implantation technique to form doped cSi zones. The main focus of this project will be devoted to design and develop cSi SC with the potential to be integrated in an industrial setup, thus impacting the photovoltaic (PV) market in a positive manner.