The Effect of SiNx:H Stoichiometry on Electrical and Chemical Passivation of Al2O3/SiNx:H Stack Layer on p-type Silicon Wafers
Yazar Adı
Hasan Hüseyin Canar, Gence Bektaş, Raşit Turan
Hasan Hüseyin Canar, Gence Bektaş, Raşit Turan
Yayın Tarihi
06.08.2023
06.08.2023
DOI Numarası
10.1063/5.0140213
10.1063/5.0140213
Dergi Adı
AIP Conference Proceedings: SiliconPV2022
AIP Conference Proceedings: SiliconPV2022