Service Device/System: Fully automatic wet benches for Si wafer patterning and contact isolation
1-100 units (including wafer); Priced over 50 wafers
Service Device/System: Fully automatic wet benches for Si wafer patterning and contact isolation
1-100 units (including wafer); Priced over 50 wafers
Service Device/System: Ion implantation process
Process for 1 element; Priced over 3 wafers
Service Device/System: Nano-second laser for scratching thin films
hour
Service Device/System: Fully automatic wet benches for Si wafer patterning and contact isolation
100 units and above (including slice); Priced over 50 wafers
Service Device/System: Metal evaporation process by e-beam
Excluding metal price; 1 evaporation
Service Device/System: Thermal evaporation system
Excluding metal price; unit
Service Device/System: Diffusion furnaces for full-area p and n-type doping
Priced over 10 wafers
Service Device/System: Electroplating
wafer
Service Device/System: Sputter coating system
Excluding metal price; unit
Service Device/System: Spatial Atomic Layer Deposition (ALD) system for passivation of Alumina (Al2O3)
Thinner than 10 nm; Priced over 1 wafer
Service Device/System: PERC cell production
Priced over 10 wafers
Service Device/System: Electron beam evaporation system
Excluding metal price; unit
Service Device/System: Spatial Atomic Layer Deposition (ALD) system for passivation of Alumina (Al2O3)
10-30 nm; Priced over 1 wafer
Service Device/System: Wet benches for cleaning and similar chemical process
RCA-1, RCA-2 processes (including wafer); Priced over 25 wafers
Service Device/System: Marking laser
hour
Service Device/System: Spatial Atomic Layer Deposition (ALD) system for passivation of Alumina (Al2O3)
Thicker than 30 nm; Priced over 1 wafer
Service Device/System: Low-pressure doping furnace
Priced over 10 wafers
Service Device/System: Annealing furnaces
hour
Service Device/System: PECVD for dielectric (SixNy and SiOxNy) coating processes
Thinner than 100 nm; Priced over 20 wafers
Service Device/System: Oxidation furnace
Priced over 10 wafers
Service Device/System: Oxidation furnaces
hour
Service Device/System: PECVD for dielectric (SixNy and SiOxNy) coating processes
100-200 nm; Priced over 20 wafers
Service Device/System: Mask alignment/ lithography system
hour
Service Device/System: Spin coater system
hour
Service Device/System: PECVD for dielectric (SixNy and SiOxNy) coating processes
Thicker than 200 nm; Priced over 20 wafers
Service Device/System: Cluster device for heterojunction and thin-film Si cell production
i-amorphous Si coating; unit
Service Device/System: Wet benches
hour
Service Device/System : Flash Solar Simulator (Class AAA)
Brand-Model of Service Device/System Type: Quicksun/ 120CA-XL
Description: It is used to determine the basic parameters of solar cells such as FF, Jsc, Voc using the flash method.
unit
Service Device/System: Production of thin film Si by LPCVD
Thinner than 100 nm; Priced over 20 wafers
Service Device/System: Cluster device for heterojunction and thin-film Si cell production
n-amorphous Si coating; unit
Service Device/System: Furnaces
hour
Service Device/System: Production of thin film Si by LPCVD
100-200 nm; Priced over 20 wafers
Service Device/System: Cluster device for heterojunction and thin-film Si cell production
p-amorphous Si coating; unit
Service Device/System : Hot Disk
Brand-Model of Service Device/System Type: TPS 2500 S
Description: Thermal conductivity, thermal diffusivity, thermal effusivity and specific heat capacity of materials at room temperature are measured by Transient Plane Source (TPS), which is a standardized method in ISO22007-2.
unit
Service Device/System: Production of thin film Si by LPCVD
Thicker than 200 nm; Priced over 20 wafers
Service Device/System: Cluster device for heterojunction and thin-film Si cell production
ITO coating; unit
Service Device/System : Hot Disk
Brand-Model of Service Device/System Type: TPS 2500 S
Description: Thermal conductivity, thermal diffusivity, thermal effusivity and specific heat capacity of materials up to 400°C are measured by Transient Plane Source (TPS), which is a standardized method in ISO22007-2.
unit
Service Device/System: Picosecond laser for contact opening and material removal/cutting
hour
Service Device/System: Cluster device for heterojunction and thin-film Si cell production
Production of a complete heterojunction cell; unit
Service Device/System : PTC Simulator
Brand-Model of Service Device/System Type: Novel Design
Description: Thermal oil is heated using electrical resistance and circulates in a closed system at a certain temperature. In industrial applications requiring thermal energy such as distillation, drying, evaporation, the performance of the industrial application is measured by making the necessary modifications according to the application. Priced according to the application to be used.
unit