Our facility analyzes the half-fabricated cells by their structures with Raman, FTIR, XPS, ToF-SIMS, ECV, EDS, XRD, and Spectroscopic Ellipsometry measurements. Elemental bonds and their roles in the solar cells were investigated by Raman, FTIR, and XPS characterizations. Meanwhile, ToF-SIMS and ECV prepare doping levels of passive and active dopants in the cells. Furthermore, ToF-SIMS, XPS, and EDS could trace the impurities in the cells and affect their performance. XRD and Raman spectroscopy present crystallographic information about the layers in the cells, while Spectroscopic Ellipsometry measurements understand the optical properties of the layers. SEM and AFM techniques help us see the morphology and topography of the cells. Four-point probe, Sinton lifetime, and Suns-Voc evaluations demonstrate the potential of cells before fabrication is finished. Generally, we allege our capability to test and characterize skill varieties for solar cell technologies as a pioneer in Türkiye, Eastern Europe, and the Middle East.
SERVICE DEVICE LIST and DESCRIPTIONS
| Code | Service | Unit | Price (TL) |
|---|---|---|---|
| H0001 | Determination of the content of the material and the bonds between atoms with one-thousandth precision | per sample | 6,045.00 |
| H0002 | Boron (B) doping process | per hour | 4,000.00 |
| H0003 | Spin coating | Up to 1 hour | 1,200.00 |
| H0004 | Spin coating | Up to 1 hour | 1,000.00 |
| H0005 | Doping Activation Energy Measurement by Current-Voltage Measurement at Cryogenic Temperatures | per sample | 12,955.00 |
| H0006 | Defect analysis with the effect of Photoluminescence at Cryogenic Temperatures | per sample | 17,272.00 |
| H0007 | Screen Printing Metallization | per hour | 16,000.00 |
| H0008 | Screen Printing Metallization | per hour | 12,000.00 |
| H0009 | Measurement of active dopant conce ntration in depth by Electrochemical Capacitance-Voltage (ECV) | per hour | 3,000.00 |
| H0010 | Electroluminescence Imaging (EL) (Module) | per sample | 2,160.00 |
| H0011 | Electroluminescence Imaging (Small area) | Up to 1 hour | 900.00 |
| H0012 | Maximum Power Test (Double-Sided PV Panels) | per sample | 6,980.00 |
| H0013 | Maximum Power Test (Single-Sided PV Panels) | per sample | 5,040.00 |
| H0014 | Solar cell efficiency measurement on an industrial size | per sample | 400.00 |
| H0015 | Solar Cell efficiency measurement under flash light | per sample | 400.00 |
| H0016 | Pseudo-efficiency measurement of a solar cell under flash light | per sample | 1,730.00 |
| H0017 | Determination of flash-induction interaction charge carrier lifetime depending on temperature | per sample | 6,480.00 |
| H0018 | Phosphorus (P) doping process | per hour | 3,000.00 |
| H0019 | Outdoor tests of photovoltaic modules | per month | 17,275.00 |
| H0020 | FTIR in glovebox | Up to 1 hour | 900.00 |
| H0021 | Imaging and mapping the structural defects of solar cells by photoluminescence method | per sample | 4,320.00 |
| H0022 | Measurement of metal contact resistance of solar cells (including sample preparation) | per hour | 2,000.00 |
| H0023 | Determination of solar cell contact damages by electroluminescence method | per sample | 200.00 |
| H0024 | Horizontal and vertical dimension measurement of phenomena on the surface of solar cells | per sample | 1,730.00 |
| H0025 | 18 kWe Solar Simulator use for concentrated solar energy applications | per sample | Pricing will be customized based on demand |
| H0026 | I-V measurement in ambient conditions (Small area) | per hour | 900.00 |
| H0027 | I-V measurement in glove box (Small area) | per hour | 1,000.00 |
| H0028 | Implantation processes (B, P, BF2, F, Ar) | per hour | 12,000.00 |
| H0029 | Current-voltage measurement in thin-film solar cells | per sample | 1,300.00 |
| H0030 | Interstitial Oxygen and Carbon Content Concentration Analysis of Materials by Infrared Ray Absorbtion | per sample | 17,272.00 |
| H0031 | Measurement of quantum efficiency of solar cells under cascade monochromatic radiation | per sample | 8,635.00 |
| H0032 | Determination of right-angle and diffuse transmittance properties of materials under stepped monochromatic radiation | per sample | 6,480.00 |
| H0033 | Determination of right-angle and diffuse reflection properties of materials under stepped monochromatic radiation | per sample | 6,480.00 |
| H0034 | Measurement of deep defects by excitation-induced electrical behavior of the semiconductors | per sample | 30,225.00 |
| H0035 | Molecular bond analysis of materials with mid-infrared light | per sample | 2,160.00 |
| H0036 | Quantitative Analysis of Cross-Linking Percentages in Encapsulant-Containing Samples Using Chemical Testing Methods | per sample | 20,000.00 |
| H0037 | Measurement of structures and chemical properties of material by Core Magnetic interaction | per sample | 12,955.00 |
| H0038 | Cryogenic Temperature Measurement of defects by the behavior of electron spin resonance in the material | per sample | 85,358.00 |
| H0039 | Room-Temperature Measurement of defects by the behavior of electrons in the material | per sample | 12,955.00 |
| H0040 | Sputter | per sample | 1,300.00 |
| H0041 | Metal evaporation | per sample | 1,800.00 |
| H0042 | (E-beam/Thermal for large area) (<1µm) | per hour | 6,000.00 |
| H0043 | Micron scaling and photographing the surface | per sample | 435.00 |
| H0044 | Surface-to-depth measurement of material contents with a ppm/ppb accuracy | per sample | 12,955.00 |
| H0045 | Nickel, Copper, Silver Plating | per hour | 5,000.00 |
| H0046 | Band gap and Defect analysis with the effect of Photoluminescence at room Temperatures | per sample | 2,160.00 |
| H0047 | Implementation of the PTC simulator as a benchmark for industrial applications | per sample | Pricing will be customized based on demand |
| H0048 | Structure and phase analysis by Raman spectroscopy method | per sample | 2,160.00 |
| H0049 | Temperature Coefficient Measurement Test | per sample | 26,985.00 |
| H0050 | Mono Si wafer (M2,G1) saw damage removal | per hour | 5,000.00 |
| H0051 | Mono Si wafer (M2,G1) Surface texturing (forming Pyramid structures on the surface) | per hour | 20,000.00 |
| H0052 | SixNy and SiOxNy coating on Si surface | per sample | 2,000.00 |
| H0053 | Al2O3 coating on Si wafer surface (<10nm) | per sample | 2,000.00 |
| H0054 | Zn:Al coating on Si wafer surface (<10nm) | per sample | 12,000.00 |
| H0055 | Optical properties measurement of absorber materials | per sample | 3,455.00 |
| H0056 | Standard Test Condition (STC) Performance Test (Double-Sided PV Panels) | per sample | 6,980.00 |
| H0057 | Standard Test Condition (STC) Performance Test (Single Sided PV Panels) | per sample | 5,040.00 |
| H0058 | Standard Test Condition (STC) Performance Test (Double-Sided PV Panels) | per sample | 2,590.00 |
| H0059 | Surface composition analysis mapping by Energy Dispersive Spectroscopy of scanning electron beam | per sample | 8,636.00 |
| H0060 | Surface composition analysis by Energy Dispersive Spectroscopy of scanning electron beam for 5 point | per sample | 4,320.00 |
| H0061 | Annealing processes (<1000C) | per hour | 2,000.00 |
| H0062 | Thermal Imaging | per sample (min 20 samples) | 200.00 |
| H0063 | Oxidation of Si surface by thermal method | per sample | 2,000.00 |
| H0064 | Thermophysical property measurement at room temperature with the transient plane source method | per sample | 2,160.00 |
| H0065 | Thermophysical property measurement at high temperatures with the transient plane source method | per sample | 3,170.00 |
| H0066 | Cutting, ablation and marking processes | per hour | 3,000.00 |
| H0067 | Reflection, transmission and/or photoluminesence | Up to 1 hour | 900.00 |
| H0068 | Determination of charge carriers effective lifetime and implied Voc | per sample | 200.00 |
| H0069 | Surface topography roughness measurements with high resolution atomic force microscopy | per sample | 3,455.00 |
| H0070 | Determination of structural and morphological features from the surface and interface by high resolution scanning electron microscopy | per sample | 3,455.00 |
| H0071 | Determination of structural and morphological features from the surface and interface by high resolution scanning electron microscopy | per sample | 2,590.00 |
| H0072 | Surface temperature measurement with high precision | per day | 2,160.00 |
| H0073 | Surface resistance measurement | per sample | 100.00 |
| H0074 | Glint and glare analysis | per sample | Pricing will be customized based on demand |
DISCOUNT CONDITIONS AND RATES
If a service request is sent on behalf of an institution, organization, university, or firm/company, the discount rates will be applied as follows:
- Middle East Technical University (METU): %50
- Research Infrastructures supported by Law No. 6550: %30
- METU Technopolis Firms: %30
- Foundation Universities: %20
- Public Institutions and Organizations: %30
- Firms/Companies within the scope of Law No. 4961 and 5746: %20
- Public, University, and Private Sector Cooperations: %20 (If the request is sent on behalf of a university)
* OUR PRICES DO NOT INCLUDE VAT.
* Up to 50% discount can be applied to public institutions and organizations, higher education institutions, and SMEs in service requests in line with the strategic goals of ODTÜ-GÜNAM in the field of solar energy research and development.